MISE EN EVIDENCE DE DEFAUTS ACTIFS LUMINESCENTS DANS LE ZnO PAR PHOTOLUMINESCENCE ET TSC

Abstract

In this work, we have, experimentally, investigated the luminescence defect in ZnO thin film deposited onto crystalline Si substrate. The studied film was deposited by DC reactive sputtering technique, under (Ar + O2) plasma at 373 K, durig 1 hour and annealed at 573 K during 1 hour. The UV-Visible transmittance and ellipsometrie characterisations revealed that the optical energy band gap and the film thickness are respectively, around to 3.35 eV and 50 nm. The photoluminescence spectrum measured at room temperature indicates that the deposited film presente a UV luminescence peak at 384 nm (3.21 eV). The current-potentialtemperature and the stimulated current measurements indicate the presence of a shallow level with activation energy around to 0.35 eV, attributed to the interstial zinc or oxygen vacancies.